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Freescale Semiconductor Technical Data
Document Number: MRF6V10010N Rev. 3, 7/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications. * Typical Pulsed Performance: VDD = 50 Volts, IDQ = 10 mA, Pout = 10 Watts Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 sec, Duty Cycle = 20% Power Gain -- 25 dB Drain Efficiency -- 69% Features * Characterized with Series Equivalent Large--Signal Impedance Parameters * Qualified Up to a Maximum of 50 VDD Operation * Integrated ESD Protection * Greater Negative Gate--Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
MRF6V10010NR4
1090 MHz, 10 W, 50 V PULSED LATERAL N-CHANNEL RF POWER MOSFET
CASE 466-03, STYLE 1 PLD-1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value --0.5, +100 --6.0, +10 -- 65 to +150 150 200 Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 79C, 10 W Pulsed, 100 sec Pulse Width, 20% Duty Cycle Symbol ZJC Value (1,2) 1.6 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
(c) Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
MRF6V10010NR4 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 7 mA) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 36 Adc) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 10 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 70 mAdc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 0.1 3.38 9.55 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1 1.7 -- 1.7 2.4 0.2 2.5 3.2 -- Vdc Vdc Vdc IGSS V(BR)DSS IDSS IDSS -- 100 -- -- -- -- -- -- 10 -- 50 2.5 Adc Vdc Adc mA Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 10 mA, Pout = 10 W Peak (2 W Avg.), f = 1090 MHz, Pulsed, 100 sec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss Gps D IRL 23 66 -- 25 69 --12 28 -- --8 dB % dB
MRF6V10010NR4 2 RF Device Data Freescale Semiconductor
VBIAS
L1 + C2 C3 C12 R1 R2 C10 L2 Z8 Z9 Z10 Z11 C14 C15 DUT C11 Z12 C9 C8 C7 C13
VSUPPLY
RF OUTPUT
RF INPUT
Z1 C1
Z2
Z3
C5
Z4
C6
Z5
Z6
Z7
C16 Z1 Z2 Z3 Z4 Z5 Z6 Z7
C4
0.200 x 0.080 Microstrip 0.696 x 0.120 Microstrip 0.087 x 0.320 Microstrip 0.323 x 0.320 Microstrip 0.320 x 0.620 x 0.185 Taper 0.135 x 0.620 Microstrip 0.714 x 0.620 Microstrip
Z8 Z9 Z10 Z11 Z12 PCB
0.367 x 0.320 Microstrip 0.162 x 0.320 Microstrip 0.757 x 0.080 Microstip 0.763 x 0.080 Microstrip 0.290 x 0.080 Microstrip Arlon CuClad 250GX--0300--55--22, 0.030, r = 2.55
Figure 1. MR6V10010NR4 Test Circuit Schematic
Table 6. MR6V10010NR4 Test Circuit Component Designations and Values
Part C1, C9, C12 C2 C3, C8 C4, C6 C5, C16 C7 C10, C15 C11 C13 C14 L1 L2 R1 R2 Description 43 pF Chip Capacitors 10 F, 35 V Tantalum Capacitor 2.2 F, 100 V Chip Capacitors 7.5 pF Chip Capacitors 3.0 pF Chip Capacitors 0.1 F Chip Capacitor 0.3 pF Chip Capacitors 5.6 pF Chip Capacitor 470 F, 63 V Chip Capacitor 47 pF Chip Capacitor 8 nH Inductor 5 nH Inductor 3300 , 1/4 W Chip Resistor 10 , 1/4 W Chip Resistor Part Number ATC100B430JT500XT T491D106K035AT GQM1885C2A2R2CB01B ATC100B7R5CT500XT ATC100B3R0CT500XT C1206C104K5RACTR ATC100B0R3BT500XT ATC100B5R6CT500XT 477KXM063M ATC100B470JT500XT A03TKLC A02TKLC CRCW12063301FKEA CRCW120610R0FKEA Manufacturer ATC Kemet Murata ATC ATC Kemet ATC ATC Illlinois Capacitor ATC Coilcraft Coilcraft Vishay Vishay
MRF6V10010NR4 RF Device Data Freescale Semiconductor 3
C2
L1
C3 C12 R1 R2 C15 C10 C8
C7
C13
C9 L2 C11 C14
C1
C16 C5
C4 C6
MRF6V10010N Rev. 3
Figure 2. MRF6V10010NR4 Test Circuit Component Layout
MRF6V10010NR4 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
100 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc C, CAPACITANCE (pF) 10 Ciss ID, DRAIN CURRENT (AMPS) TJ = 200C TJ = 175C TJ = 150C 10
1
Coss 1
Crss 0.1 0 10 20 30 40 50 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 0.1 1
TC = 25C 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 100
Figure 3. Capacitance versus Drain-Source Voltage
27 Gps D, DRAIN EFFICIENCY (%) 26 Gps, POWER GAIN (dB) 25 24 23 22 5 6 VDD = 50 Vdc, IDQ = 10 mA, f = 1090 MHz Pulse Width = 100 sec, Duty Cycle = 20% 7 8 9 10 11 12 D 70 65 60 55 50 75 Pout, OUTPUT POWER (dBm) PULSED 45
Figure 4. DC Safe Operating Area
P3dB = 40.66 dBm (11.65 W)
Ideal
P1dB = 40.18 dBm (10.42 W) 40
Actual
VDD = 50 Vdc, IDQ = 10 mA, f = 1090 MHz Pulse Width = 100 sec, Duty Cycle = 20% 35 12 13 14 15 16 17 18 19
Pout, OUTPUT POWER (WATTS) PULSED
Pin, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power
27 Pout, OUTPUT POWER (WATTS) PULSED 25 Gps, POWER GAIN (dB) 23 21 35 V VDD = 30 V 0 2 4 6 45 V 40 V IDQ = 10 mA, f = 1090 MHz Pulse Width = 100 sec Duty Cycle = 20% 8 10 12 14 12 10 8 6 4 2 0 0
Figure 6. Pulsed Output Power versus Input Power
TC = --30_C 85_C 25_C
50 V
19 17
VDD = 50 Vdc IDQ = 10 mA f = 1090 MHz Pulse Width = 100 sec Duty Cycle = 20% 0.01 0.02 0.03 0.04 0.05 0.06 0.07
Pout, OUTPUT POWER (WATTS) PULSED
Pin, INPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus Output Power
Figure 8. Pulsed Output Power versus Input Power
MRF6V10010NR4 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
29 28 Gps, POWER GAIN (dB) 27 26 25 24 23 22 0 85_C 25_C TC = --30_C D 80 70 60 50 40 Gps 30 20 10 12 14 D, DRAIN EFFICIENCY (%)
VDD = 50 Vdc, IDQ = 10 mA, f = 1090 MHz Pulse Width = 100 sec, Duty Cycle = 20% 2 4 6 8 10
Pout, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Gain and Drain Efficiency versus Output Power
109
108 MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 10 W Peak, Pulse Width = 100 sec, Duty Cycle = 20%, and D = 69%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 10. MTTF versus Junction Temperature
MRF6V10010NR4 6 RF Device Data Freescale Semiconductor
Zo = 50
Zload
f = 1090 MHz
Zsource f = 1090 MHz
VDD = 50 Vdc, IDQ = 10 mA, Pout = 10 W Peak f MHz 1090 Zsource 1.15 + j8.96 Zload 13.47 + j34.32
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Input Matching Network
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance
MRF6V10010NR4 RF Device Data Freescale Semiconductor 7
PACKAGE DIMENSIONS
A F
3
0.146 3.71 0.095 2.41
0.115 2.92
B
D
1
2
R
L
0.115 2.92 0.020 0.51
4
N K Q
ZONE V
0.35 (0.89) X 45_ 5 _ 10_DRAFT
inches mm
SOLDER FOOTPRINT
DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25
U H
4
P C
Y
Y
E
ZONE W 1 2
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE
3
G
S
ZONE X
VIEW Y--Y
CASE 466-03 ISSUE D PLD-1.5 PLASTIC
MRF6V10010NR4 8 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 2 Date June 2008 Feb. 2009 June 2009 * Initial Release of Data Sheet * Corrected Zsource, "2.57 -- j7.33" to "1.15 + j8.96" and Zload, "14.10 -- j34.77" to "13.47 + j34.32" in Fig. 11, Series Equivalent Source and Load Impedance data table and replotted data, p. 7 * Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516, p. 2 * Added Electromigration MTTF Calculator availability to Product Documentation, Tools and Software, p. 9 3 July 2010 * Reporting of pulsed thermal data now shown using the ZJC symbol, Table 2, Thermal Characteristics, p. 1 * Corrected errors made in the translation of the printed circuit board to the schematic, Fig. 1, Test Circuit Schematic and Z list, p. 3 Description
MRF6V10010NR4 RF Device Data Freescale Semiconductor 9
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MRF6V10010NR4
Rev. 10 3, 7/2010 Document Number: MRF6V10010N
RF Device Data Freescale Semiconductor

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